09/01/2024
SS015N06LS 60V Low Internal Resistance For TOLL
Digital Energy Storage Network News: The 2017 version of the national standard "Technical Specification for Lithium ion Battery Management Systems for Electrochemical Energy Storage Power Stations" (GB/T 34131-2017) (hereinafter referred to as the "old national standard") has been revised, and the 2023 version of the national standard "Battery Management Systems for Electric Power Storage" (GB/T 34131-2023) (hereinafter referred to as the "new national standard") has recently been officially released and will be officially implemented on October 1 this year.
BMS is the core equipment for realizing the visualization and controllability of energy storage batteries, with functions such as data collection, protection alarm, control, and status estimation, in order to achieve safe and efficient operation of energy storage systems. The new national standard stipulates the working environment, technical requirements, test methods, inspection rules, and other contents of BMS, with significant changes and richer connotations. It will bring significant changes to the manufacturing, engineering design, inspection and testing, and operation and maintenance of BMS equipment. Compared to the old national standard, the new national standard has refined and scientifically regulated the collection errors and sampling cycles of current, voltage, and temperature.
Comparison of collection errors and sampling cycles of current, voltage, and temperature in BMS old and new national standards
response to the new national standard policy of BMS, SKY Semiconductor has launched a new TOLL packaging product - SS015N06LS - with a 60V and ultra-low internal resistance. Let's take a look at the basic parameters of this supernova product!
SS015N06LS from SKY Semiconductor is an N-channel MOS with a drain source breakdown voltage of 60V, packaged in TOLL. The VGS has a withstand voltage of ± 20V, Vth is 3V, and the maximum drain current is 340A. When the VGS is 10V, the typical value of the conduction resistance RDS (on) is 1.3m Ω, suitable for high-power applications such as DC-DC, BMS, and automotive starting power.
SKY Semiconductor's SS015N06LS has become a popular MOSFET product in the BMS energy storage market and has started mass shipping, with a monthly shipment volume of 1kkpcs. Let's take a look at the specific successful cases of SS015N06LS!
For the BMS energy storage market, SKY Semiconductor's high-power, high current, and low internal resistance TOLL products adopt advanced SGT technology and advanced packaging. The products have extremely low conduction internal resistance, extremely low gate charge, and enhanced EAS capability, effectively reducing battery temperature rise and improving battery reliability.
The TOLL series products of SKY Semiconductor have a wide range of product categories that can meet different customer needs. But SKY Semiconductor will continue to strengthen research and development investment, polish more and more competitive new products, and maintain close technical exchanges and communication with customers, timely understand market changes and customer needs, to meet more diverse market demands.
The development of energy storage technology is rapid, and relevant regulations and specifications are also being accelerated to adapt to the rapid development needs of energy storage, providing precise guidance for the healthy and long-term development of the industry. SKY Semiconductor will continue to be committed to developing BMS chips with better performance, promoting accelerated energy transformation, and jointly building a green and beautiful future.
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