![[Review]Kinetics of thermal oxidation of silicon2025 Appl. Phys. Express 18 120101https://iopscience.iop.org/article/10....](https://img3.engineering10.com/434/004/122242614764340048.jpg)
13/08/2026
[Review]
Kinetics of thermal oxidation of silicon
2025 Appl. Phys. Express 18 120101
https://iopscience.iop.org/article/10.35848/1882-0786/ae1f5b
APEX-NEXT (Noteworthy Excellent Topics)
https://iopscience.iop.org/collections/apex-250923-01
![[APEX REVIEW : Open Access]Prospects for β-Ga2O3: now and into the future2024 Appl. Phys. Express 17 090101Kohei Sasaki,...](https://img4.engineering10.com/834/004/122242579688340048.jpg)
![[Review]Advancements in power device technologies to meet the demands of power electronics applications2025 Appl. Phys. ...](https://img4.engineering10.com/834/004/122242517708340048.jpg)
![[APEX REVIEW : Open Access]Fundamentals and recent advances of terahertz resonant tunneling diodes2024 17 070101Safumi S...](https://img5.engineering10.com/634/004/122242499276340048.jpg)
![[Review]Multimodal flexible sensors for edge AI system2025 Appl. Phys. Express 18 110101https://iopscience.iop.org/artic...](https://img5.engineering10.com/634/004/122242417316340048.jpg)
![[APEX REVIEW : OPEN ACCESS]Surface and interface physics driven by quantum materials2024 Appl. Phys. Express 17 050101Sh...](https://img4.engineering10.com/834/004/122242404338340048.jpg)
![[APEX REVIEW]Progress of computer simulation technologies for surface acoustic wave devices—review2025 Appl. Phys. Expre...](https://img4.engineering10.com/234/004/122242326392340048.jpg)
![[2024 OPEN ACCESS]Ultra-high electron mobility in Sn-doped two-dimensional Ga2O3 modified by biaxial strain and electric...](https://img5.engineering10.com/034/004/122242326140340048.jpg)
![[APEX REVIEW]Recent progress of atomic resolution holography: from point defects to defect complexes2025 Appl. Phys. Exp...](https://img5.engineering10.com/634/004/122242177886340048.jpg)
![[2024 OPEN ACCESS]Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interf...](https://img4.engineering10.com/834/004/122242164668340048.jpg)
